N TYPE GE FOR DUMMIES

N type Ge for Dummies

s is usually that with the substrate content. The lattice mismatch contributes to a substantial buildup of pressure energy in Ge levels epitaxially developed on Si. This strain Vitality is mostly relieved by two mechanisms: (i) generation of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of the two the su

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